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ARTICLE 2024 Vol 3 · No 3 EN deb2b6895a09

DOPING A SILICON SINGLE CRYSTAL WITH TERBIUM THROUGH DIFFUSION.

  • Saidimov Ya.A. Research Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan (Tashkent), Uzbekistan
  • Rumi R.F. Research Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan (Tashkent), Uzbekistan
  • Umarov F.B. Research Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan (Tashkent), Uzbekistan

Research Focus International Scientific Journal, 3(3), 8–10 · ISSN 2181-3833

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Annotatsiya

Using the diffusion method, monocrystalline samples of silicon doped with Thulium were prepared at 1250 degrees Celsius for 50 hours. The samples were found to have p-type conductivity after high-temperature annealing. After this process, the samples changed their type of conductivity from p-type to n-type.

Kalit so‘zlar

monocrystalline siliconrare-earth elementsTerbiumdiffusion methodalloyingHall effectVan der Pau methodtype of conductivityconcentration of charge carriersresistivity

Iqtibos keltirish

Ya.A., Saidimov; Rumi, R.F.; Umarov, F.B. (2024). DOPING A SILICON SINGLE CRYSTAL WITH TERBIUM THROUGH DIFFUSION.. Research Focus International Scientific Journal, 3(3), 8–10. https://doi.org/10.66073/researchfocus.v3i3.919

Identifikator
https://rf-library.uz/article/deb2b6895a09/doping-a-silicon-single-crystal-with-terbium-through-diffusion
DOI
10.66073/researchfocus.v3i3.919
Litsenziya
Copyright (c) 2024 Research Focus International Scientific Journal
Nashriyot
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Repozitoriyga qo‘shildi
2026-08-07