DOPING A SILICON SINGLE CRYSTAL WITH TERBIUM THROUGH DIFFUSION.

Ya.A., Saidimov; Rumi, R.F.; Umarov, F.B.

doi:10.66073/researchfocus.v3i3.919

ARTICLE 2024 Vol 3 · No 3 EN deb2b6895a09

DOPING A SILICON SINGLE CRYSTAL WITH TERBIUM THROUGH DIFFUSION.

Saidimov Ya.A. Research Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan (Tashkent), Uzbekistan
Rumi R.F. Research Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan (Tashkent), Uzbekistan
Umarov F.B. Research Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan (Tashkent), Uzbekistan

Research Focus International Scientific Journal, 3(3), 8–10 · ISSN 2181-3833

Полный текст (PDF) 554 KB DOI Страница издателя

Аннотация

Using the diffusion method, monocrystalline samples of silicon doped with Thulium were prepared at 1250 degrees Celsius for 50 hours. The samples were found to have p-type conductivity after high-temperature annealing. After this process, the samples changed their type of conductivity from p-type to n-type.

Ключевые слова

monocrystalline silicon rare-earth elements Terbium diffusion method alloying Hall effect Van der Pau method type of conductivity concentration of charge carriers resistivity

Как цитировать

Ya.A., Saidimov; Rumi, R.F.; Umarov, F.B. (2024). DOPING A SILICON SINGLE CRYSTAL WITH TERBIUM THROUGH DIFFUSION.. Research Focus International Scientific Journal, 3(3), 8–10. https://doi.org/10.66073/researchfocus.v3i3.919

Идентификатор: https://rf-library.uz/article/deb2b6895a09/doping-a-silicon-single-crystal-with-terbium-through-diffusion
DOI: 10.66073/researchfocus.v3i3.919
Издатель: LLC Ilm-fan va innovatsiyalar akademiyasi
Добавлено в репозиторий: 2026-08-07