RAMAN SPECTROSCOPIC ANALYSIS OF TUNGSTEN SILICIDE (WSI2) PHASE FORMATION AND LATTICE STRESS IN P-TYPE SILICON.

Utamuradova, Sh.B.; Daliev, Sh.Kh.; Khamdamov, J.J.; Mardiyev, Y.Z.

doi:10.66073/researchfocus.v4i11.1824

ARTICLE 2025 Vol 4 · No 11 EN c930ee868134

RAMAN SPECTROSCOPIC ANALYSIS OF TUNGSTEN SILICIDE (WSI2) PHASE FORMATION AND LATTICE STRESS IN P-TYPE SILICON.

Sh.B. Utamuradova Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, Uzbekistan
Sh.Kh. Daliev Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, Uzbekistan
J.J. Khamdamov Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, Uzbekistan
Y.Z. Mardiyev Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, Uzbekistan

Research Focus International Scientific Journal, 4(11), 16–24 · ISSN 2181-3833

Полный текст (PDF) 807 KB DOI Страница издателя

Аннотация

In this study, the effect of tungsten (W) incorporation on the compositional and structural properties of p-type single-crystal silicon (p-Si) samples via high-temperature (1573 K, 5 hours) thermal diffusion was investigated. The properties of the samples were analyzed using Raman scattering spectroscopy. Raman spectroscopy analysis confirmed a decrease in the intensity of the main silicon LO peak in the p-Si<W> sample, as well as the appearance of new, sharp peaks at frequencies of ~244 cm⁻¹ and ~429 cm⁻¹. These changes indicate the formation of a new stable phase – tungsten silicide (WSi2) – on the silicon surface. Furthermore, the shift of the 2TA peak center to a higher frequency (~319 cm⁻¹) indicated the emergence of strong compressive mechanical stresses in the lattice.

Ключевые слова

single-crystal silicon (p-Si)tungsten (W)thermal diffusion Raman spectroscopy resistivity tungsten silicide (WSi2)phonon bands (TA LA 2TO).

Как цитировать

Utamuradova, Sh.B.; Daliev, Sh.Kh.; Khamdamov, J.J.; Mardiyev, Y.Z. (2025). RAMAN SPECTROSCOPIC ANALYSIS OF TUNGSTEN SILICIDE (WSI2) PHASE FORMATION AND LATTICE STRESS IN P-TYPE SILICON.. Research Focus International Scientific Journal, 4(11), 16–24. https://doi.org/10.66073/researchfocus.v4i11.1824

Идентификатор: https://rf-library.uz/article/c930ee868134/raman-spectroscopic-analysis-of-tungsten-silicide-wsi2-phase-formation-and
DOI: 10.66073/researchfocus.v4i11.1824
Издатель: LLC Ilm-fan va innovatsiyalar akademiyasi
Добавлено в репозиторий: 2026-08-07